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BTM7710G trilithic data sheet, rev. 1.0, june 2008 automotive power
data sheet 2 rev. 1.0, 2008-06-27 BTM7710G table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 pin assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 circuit description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.1 input circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.2 output stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.3 short circuit protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.4 overtemperature protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.5 undervoltage lockout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.6 status flag . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5.1 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5.2 functional range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.3 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 7 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 table of contents
pg-dso-28-22 type package marking BTM7710G pg-dso-28-22 BTM7710G data sheet 3 rev. 1.0, 2008-06-27 trilithic BTM7710G 1 overview features ? quad d-mos switch driver ? free configurable as bridge or quad-switch ? optimized for dc motor management applications ?low r ds on high side: 70 m ? typ. @ 25 c, 180 m ? max. @ 150 c low side: 40 m ? typ. @ 25 c, 80 m ? max. @ 150 c ? peak current: typ. 15 a @ 25 c ? very low quiescent current: typ. 5 a @ 25 c ? small outline, enhanced power pg-dso-package ? operates up to 40 v ? load and gnd-short-circuit-protection ? overtemperature shut down with hysteresis ? undervoltage detection with hysteresis ? status flag diagnosis ? internal clamp diodes ? isolated sources for external current sensing ? green product (rohs compliant) ?aec qualified description the BTM7710G is part of the trilithic family containing three dies in one package: one double high-side switch and two low-side switches. the drains of these three vertical dmos chips are mounted on separated lead frames. the sources are connected to individual pins, so the BTM7710G can be used in h-bridge- as well as in any other configuration. the double high-side switch is manufactured in smart sipmos ? technology which combines low r ds on vertical dmos power stages with cmos circuitry for control, protection and diagnosis. to achieve low r ds on and fast switching performance, the low-side switches are manufactured in s-fet logic level technology.
BTM7710G data sheet 4 rev. 1.0, 2008-06-27 2 pin configuration 2.1 pin assignment figure 1 pin assignment BTM7710G (top view) 28 dl1 25 dl1 27 sl1 26 sl1 24 dhvs 23 sh1 22 sh1 21 sh2 20 sh2 19 dhvs 18 dl2 15 dl2 16 sl2 17 sl2 1 dl1 5 dhvs 4 n.c. 3 dl1 2 il1 6 gnd 7 ih1 8 st 9 ih2 10 dhvs 11 dl2 14 n.c. 13 dl2 12 il2 hs-leadframe ls-leadframe ls-leadframe
data sheet 5 rev. 1.0, 2008-06-27 BTM7710G pins written in bold type need power wiring. table 1 pin definitions and functions pin no. symbol function 1, 3, 25, 28 dl1 drain of low-side switch1, leadframe 1 1) 1) to reduce the thermal resistance these pins are direct connected via metal bridges to the leadframe. 2 il1 analog input of low-side switch1 4 n.c. not connected 5, 10, 19, 24 dhvs drain of high-side switches and power supply voltage, leadframe 2 1) 6 gnd ground 7 ih1 digital input of high-side switch1 8 st status of high-side switches; open drain output 9 ih2 digital input of high-side switch2 11 n.c. not connected 12, 14, 15, 18 dl2 drain of low-side switch2, leadframe 3 1) 13 il2 analog input of low-side switch2 16,17 sl2 source of low-side switch2 20,21 sh2 source of high-side switch2 22,23 sh1 source of high-side switch1 26,27 sl1 source of low-side switch1
BTM7710G data sheet 6 rev. 1.0, 2008-06-27 2.2 terms figure 2 terms BTM7710G table 2 hs-source-current named during short circuit named during leakage-cond. i sh1,2 i scp h i dl lk sh2 dhvs st il1 gnd ih1 sl2 5,10,19,24 9 7 20,21 16,17 6 13 2 r o1 r o2 biasing and protection 22,23 1,3,25,28 8 ih2 il2 26,27 12,14,15,18 sl1 dl2 sh1 dl1 i gnd i lkcl v s =12v c l 100f c s 470nf i fh1,2 i s i sh2 i dl2 i sh1 i dl1 i dl lk 2 i dl lk 1 v dsl1 - v fl1 v dsl2 - v fl2 - v fh2 v dsh2 - v fh1 v dsh1 v uvon v uvoff i sl2 i sl1 i scp l 1 i scp l 2 v il2 v il th 2 v il1 v il th 1 v st v stl v stz v ih1 v ih2 gate driver gate driver diagnosis i st i st lk i ih1 i ih1 i il1 i il2
data sheet 7 rev. 1.0, 2008-06-27 BTM7710G 3 block diagram figure 3 block diagram BTM7710G sh2 dhvs st il1 gnd ih1 sl2 ih2 il2 sl1 dl2 sh1 dl1 5,10,19,24 9 7 20,21 16, 17 6 13 2 r o1 r o2 biasing and protection diagnosis driver out 0 in 0 l l 0 1 l h 1 0 h l 1 1 h h 22, 23 1,3,25,28 8 26, 27 12,14,15,18
BTM7710G data sheet 8 rev. 1.0, 2008-06-27 4 circuit description 4.1 input circuit the control inputs ih1,2 consist of ttl/cmos compatible schmitt-triggers with hysteresis. buffer amplifiers are driven by these stages and convert the logic signal into the necessary form for driving the power output stages. the inputs are protected by esd clamp-diodes. the inputs il1 and il2 are connected to the gates of the standard n-channel vertical power-mos-fets. 4.2 output stages the output stages consist of an low r dson power-mos h-bridge. in h-bridge configuration, the d-mos body diodes can be used for freewheeling when communicating inductive loads. if the high-side switches are used as single switches, positive and negative voltage spikes which occur when driving inductive loads are limited by integrated power clamp diodes. 4.3 short circuit protection the outputs are protected against short circuit to ground and short circuit over load an internal op-amp controls the drain-source-voltage by comparing the ds-voltage-drop with an internal reference voltage. above this trip point the op-amp reduces the output current depending on the junction temperature and the drop voltage. 4.4 overtemperature protection the high-side switches also incorporate an over temperature protection circuit with hysteresis which switches off the output transistors and sets the status output to low. 4.5 undervoltage lockout when v s reaches the switch-on voltage v uvon the ic becomes active with a hysteresis. the high-side output transistors are switched off if the supply voltage v s drops below the switch off value v uvoff . 4.6 status flag the status flag output is an open drain output with zener-diode which requires a pull-up resistor, as shown in the application circuit in figure 4 ?application example BTM7710G? on page 15 . various errors as listed in the table ?diagnosis? are reported by switching the open drain output st to low.
data sheet 9 rev. 1.0, 2008-06-27 BTM7710G table 3 truth table and diagnosis (va lid only for the high-side-switches) flag ih1 ih2 sh1 sh2 st remarks inputs outputs normal operation; identical with functional truth table 0 0 1 1 0 1 0 1 l l h h l h l h 1 1 1 1 stand-by mode switch2 active switch1 active both switches active overtemperature high-side switch1 0 1 x x l l x x 1 0detected overtemperature high-side switch2 x x 0 1 x x l l 1 0detected overtemperature both high-side switches 0 x 1 0 1 x l l l l l l 1 0 0 detected detected under voltage x x l l 1 not detected inputs: outputs: status: 0 = logic low z = output in tristate condition 1 = no error 1 = logic high l = output in sink condition 0 = error x = don?t care h = output in source condition x = voltage level undefined
BTM7710G data sheet 10 rev. 1.0, 2008-06-27 5 electrical characteristics 5.1 absolute maximum ratings note: stresses above the ones listed here may cause permanent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. note: integrated protection functions are designed to prevent ic destruction under fault conditions described in the data sheet. fault conditions are considered as ?outside? normal operating range. protection functions are not designed for continuous repetitive operation. absolute maximum ratings 1) ? 40 c < t j < 150 c 1) not subject to production test; specified by design pos. parameter symbol limit values unit remarks min. max. high-side-switches (pins dhvs, ih1,2 and sh1,2) 5.1.1 supply voltage v s ? 0.3 42 v ? 5.1.2 supply voltage for full short circuit protection v s(scp) ?28v 5.1.3 hs-drain current 2) 2) single pulse i s ? 8 3) 3) internally limited a t a = 25c; t p < 100 ms 5.1.4 hs-input current i ih ? 5 5 ma pin ih1 and ih2 5.1.5 hs-input voltage v ih ? 10 16 v pin ih1 and ih2 status output st 5.1.6 status pull up voltage v st ? 0.3 5.4 v 5.1.7+ status output current i st ? 5 5 ma pin st 5.1.8 low-side-switches (pins dl1,2, il1,2 and sl1,2) 5.1.9 drain-source-clamp voltage v dsl 55 ? v v il =0v; i d 1ma t j = 25c 5.1.10 ls-drain current 2) i dl ? 8 8 a t a = 25c; t p < 100 ms 5.1.11 ? 11 a t a = 25c; t p < 10 ms 5.1.12 ? 24 a t a = 25c; t p < 1 ms 5.1.13 ls-input voltage v il ? 20 20 v pin il1 and il2 temperatures 5.1.14 junction temperature t j ? 40 150 c? 5.1.15 storage temperature t stg ? 55 150 c? esd protection 4) 4) esd susceptibility hbm according to eia/jesd22-a114-b (1.5k ? , 100pf) 5.1.16 input ls-switch v esd ?0.3kv 5.1.17 input hs-switch v esd ?1kv 5.1.18 status hs-switch v esd ?2kv 5.1.19 output ls and hs-switch v esd ? 8 kv all other pins connected to ground
data sheet 11 rev. 1.0, 2008-06-27 BTM7710G 5.2 functional range note: within the functional range the ic operates as described in the circuit description. the electrical characteristics are specified within the conditions given in the related electrical characteristics table 5.3 thermal resistance pos. parameter symbol limit values unit remarks min. max. 5.2.20 supply voltage v s v uvoff 42 v after v s rising above v uvon 5.2.21 input voltage hs v ih ? 0.3 15 v ? 5.2.22 input voltage ls v il ? 0.3 20 v ? 5.2.23 status output current i st 02ma? 5.2.24 junction temperature t j ? 40 150 c? pos. parameter symbol limit values unit conditions min. typ. max. 5.3.25 ls-junction to soldering point 1) 1) not subject to production test, specified by design. r thjsp ? ? 20 k/w measured to pin 3 or 12 5.3.26 hs-junction to soldering point 1) r thjsp ? ? 20 k/w measured to pin 19 5.3.27 junction to ambient 1) r thja = t j(hs) / ( p (hs) + p (ls) ) r thja ?36? k/w 2) 2) specified r thja value is according to jedec jesd51-2,-5,-7 at natural convection on fr4 2s2p board; the product (chip+package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70m cu, 2 x 35m cu).
BTM7710G data sheet 12 rev. 1.0, 2008-06-27 5.4 electrical characteristics i sh1 = i sh2 = i sl1 = i sl2 = 0 a; ? 40 c < t j < 150 c; 8 v < v s < 18 v unless otherwise specified pos. parameter symbol limit values unit test condition min. typ. max. current consumption hs-switch 5.4.28 quiescent current i s ?59 a ih1 = ih2 = 0 v t j = 25 c ??13 a ih1 = ih2 = 0 v 5.4.29 supply current; one hs-switch active i s ? 1.5 3 ma ih1 or ih2 = 5 v v s = 12 v 5.4.30 supply current; both hs-switches active i s ? 3 6 ma ih1 and ih2 = 5 v v s = 12 v 5.4.31 leakage current of high-side switch i sh lk ??6 a v ih = v s h = 0 v v s = 12 v 5.4.32 leakage current through logic gnd in free wheeling condition i lkcl = i fh + i sh ??10ma i fh = 3 a v s = 12 v current consumption ls-switch 5.4.33 input current i il ? 10 100 na v il = 20 v; v dsl = 0v 5.4.34 leakage current of low-side switch i dl lk ??10 a v il = 0 v v dsl = 40v under voltage lockout hs-switch 5.4.35 switch-on voltage v uvon ??4.8v v s increasing 5.4.36 switch-off voltage v uvoff 1.8? 3.5v v s decreasing 5.4.37 switch on/off hysteresis v uvhy ?1?v v uvon ? v uvoff output stages 5.4.38 inverse diode of high-side switch; forward-voltage v fh ?0.81.2v i fh = 3 a 5.4.39 inverse diode of low-side switch; forward-voltage v fl ?0.81.2v i fl = 3 a 5.4.40 static drain-source on-resistance of high-side switch r ds on h ?70?m ? i sh =1a; v s = 12 v t j = 25 c ? 125 180 m ? i sh =1a; v s = 12 v t j = 150 c 5.4.41 static drain-source on-resistance of low-side switch r ds on l ?40?m ? i sl =1a; v il = 5 v t j = 25 c ?5580m ? i sl =1a; v il = 5 v t j = 150 c
data sheet 13 rev. 1.0, 2008-06-27 BTM7710G short circuit of high-side switch to gnd 5.4.42 initial peak sc current t del = 100 s; v s = 12 v; v dsh = 12v i scp h 15 18 20 a t j = ? 40 c ?15?a t j = + 25 c 91113a t j = + 150 c short circuit of high-side switch to v s 5.4.43 output pull-down-resistor r o 81535k ? v dsl = 3 v thermal shutdown 1) 5.4.44 thermal shutdown junction temperature t j sd 155 180 190 c? 5.4.45 thermal switch-on junction temperature t j so 150 170 180 c? 5.4.46 temperature hysteresis ? ?10? c ? = t jsd ? t jso status flag output st of high-side switch 5.4.47 low output voltage v st l ?0.20.6v i st = 1.6 ma 5.4.48 leakage current i st lk ??10 a v st = 5 v 5.4.49 zener-limit-voltage v st z 5.4 ? ? v i st = 1.6 ma switching times of high-side switch 1) 5.4.50 turn-on-time to 90% v sh t on ?75160 sr load = 12 ? v s = 12 v 5.4.51 turn-off-time to 10% v sh t off ?60160 s 5.4.52 slew rate on 10 to 30% v sh dv / d ton ??1.8v / s 5.4.53 slew rate off 70 to 40% v sh - dv / d toff ??2.1v / s switching times of low-side switch 1) 5.4.54 turn-on delay time t d(on) ?5? ns resistive load i sl = 3a; v dsl =12v v il = 5v; r g = 16 ? 5.4.55 rise time t r ?25? ns 5.4.56 switch-off delay time t d(off) ?15? ns 5.4.57 fall time t f ?25? ns gate charge of low-side switch 1) 5.4.58 input to source charge q is ?4?nc i sl = 3 a; v dsl =12 v 5.4.59 input to drain charge q id ?8?nc i sl = 3 a; v dsl =12 v 5.4.60 input charge total q i ?1740nc i sl = 3 a; v dsl =12 v v il = 0 to 5 v 5.4.61 input plateau voltage v (plateau) ?2.5- v i sl = 3 a; v dsl =12 v 1)not subject to production test; specified by design i sh1 = i sh2 = i sl1 = i sl2 = 0 a; ? 40 c < t j < 150 c; 8 v < v s < 18 v unless otherwise specified pos. parameter symbol limit values unit test condition min. typ. max.
BTM7710G data sheet 14 rev. 1.0, 2008-06-27 note: the listed characteristics are ensured over the operating range of the integrated circuit. typical characteristics specified mean values expected over the production spread. if not otherwise specified, typical characteristics apply at t a = 25 c and the given supply voltage. control inputs of high-side switches ih 1, 2 5.4.62 h-input voltage v ih high ??2.5v? 5.4.63 l-input voltage v ih low 1??v? 5.4.64 input voltage hysteresis v ih hy ?0.3?v? 5.4.65 h-input current i ih high 15 30 60 a v ih = 5 v 5.4.66 l-input current i ih low 5?20 a v ih = 0.4 v 5.4.67 input series resistance r i 2.74 5.5k ? ? 5.4.68 zener limit voltage v ih z 5.4??v i ih = 1.6 ma control inputs il1, 2 5.4.69 gate-threshold-voltage v il th 0.9 1.7 2.35 v i dl = 1.0 ma 1) not subject to production test; specified by design i sh1 = i sh2 = i sl1 = i sl2 = 0 a; ? 40 c < t j < 150 c; 8 v < v s < 18 v unless otherwise specified pos. parameter symbol limit values unit test condition min. typ. max.
data sheet 15 rev. 1.0, 2008-06-27 BTM7710G 6 application information note: the following simplified application examples are given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. the function of the described circuits must be verified in the real application figure 4 application example BTM7710G sh2 dhvs st il1 gnd ih1 sl2 5,10,19,24 9 7 20,21 16,17 6 13 2 tle 4278g v s =12v d01 z39 c s 10f c d 47nf d i q reset watchdog c q 22f v cc wd r gnd p r o1 r o2 biasing and protection m 22,23 1,3,25,28 8 ih2 il2 26,27 12,14,15,18 sl1 dl2 sh1 dl1 r q 100 k ? r s 10 k ? gate driver gate driver diagnosis xc866
BTM7710G data sheet 16 rev. 1.0, 2008-06-27 7 package outlines figure 5 pg-dso-28-22 (plastic transistor single outline package) green product (rohs compliant) to meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. green products are rohs-compliant (i.e pb-free finish on leads and suitable for pb-free soldering according to ipc/jedec j-std-020). 114 15 28 18.1 -0.4 index marking 1) 2.45 -0.1 7.6 10.3 ?.3 -0.2 0.2 2.65 max -0.2 1.27 0.23 +0.09 0.1 0.4 0.35 x 45? +0.8 +0.15 0.35 2) 8? max 0.2 28x 1) 2) does not include dambar protrusion of 0.05 max per side 1) does not include plastic or metal protrusions of 0.15 max rer side gps05123 dimensions in mm for further information on alternative packages, please visit our website: http://www.infineon.com/packages .
data sheet 17 rev. 1.0, 2008-06-27 BTM7710G 8 revision history rev. date changes 1.0 2008-06-27 initial version
edition 2008-06-27 published by infineon technologies ag 81726 munich, germany ? 6/27/08 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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